1-GBIT S BIAS-FREE OPERATION OF 1.3-MU-M STRAINED MQW-LDS IN -40-DEGREES-C TO +85-DEGREES-C TEMPERATURE-RANGE/

Authors
YAMADA H SENGA K SASAKI Y TORIKAI T UJI T
Citation
H. Yamada et al., 1-GBIT S BIAS-FREE OPERATION OF 1.3-MU-M STRAINED MQW-LDS IN -40-DEGREES-C TO +85-DEGREES-C TEMPERATURE-RANGE/, Electronics Letters, 31(8), 1995, pp. 638-639
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
638 - 639
Database
ISI
SICI code
0013-5194(1995)31:8<638:1SBOO1>2.0.ZU;2-G
Abstract
Bias-free 1.3 mu m laser diodes (LDs) have been developed for gigabit/ s transmission without temperature control. Power variation as low as 2dB between -20 degrees C +85 degrees C under 30mA driving current has been attained by introducing strained multiple quatum well (MQW) and short cavity configurations. Wide eye-opening has been realised under 1 Gbit/s zero-bias modulation in the temperature range -40 to +85 degr ees C.