DESIGN OF HIGH-POWER STRAINED INGAAS ALGAAS QUANTUM-WELL LASERS WITH A VERTICAL DIVERGENCE ANGLE OF 18-DEGREES/

Authors
TEMMYO J SUGO M
Citation
J. Temmyo et M. Sugo, DESIGN OF HIGH-POWER STRAINED INGAAS ALGAAS QUANTUM-WELL LASERS WITH A VERTICAL DIVERGENCE ANGLE OF 18-DEGREES/, Electronics Letters, 31(8), 1995, pp. 642-644
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
642 - 644
Database
ISI
SICI code
0013-5194(1995)31:8<642:DOHSIA>2.0.ZU;2-H
Abstract
Epitaxial structures were designed for high-power strained InGaAs/AlGa As quantum-well lasers with a vertical-divergence emitting angle of 18 degrees. A maximum free-space optical output of >500mW and a singlemo de-fibre coupled power of >250mW were obtained.