GAIN MEASUREMENT OF HIGH CHARACTERISTIC TEMPERATURE 1.3-MU-M GAINASP INP STRAINED-LAYER QUANTUM-WELL LASERS WITH TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR/

Authors
KASUKAWA A IWAI N YAMANAKA N YOKOUCHI N
Citation
A. Kasukawa et al., GAIN MEASUREMENT OF HIGH CHARACTERISTIC TEMPERATURE 1.3-MU-M GAINASP INP STRAINED-LAYER QUANTUM-WELL LASERS WITH TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR/, Electronics Letters, 31(8), 1995, pp. 644-645
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
644 - 645
Database
ISI
SICI code
0013-5194(1995)31:8<644:GMOHCT>2.0.ZU;2-U
Abstract
By comparing the optical gain of 1.3 mu m strained-layer quantum well lasers with characteristic temperatures T-0 of 150K (high) and 60K (ty pical), it is found that temperature insensitive net gain plays an imp ortant role in reducing the temperature sensitivity of the threshold c urrent. The resonance frequency for high T-0 lasers exhibits temperatu re insensitivity, resulting from the temperature insensitive net gain characteristics.