LOW-THRESHOLD MESA-ETCHED VERTICAL-CAVITY INGAAS GAAS SURFACE-EMITTING LASERS GROWN BY MOCVD/

Authors
MUKAIHARA T HAYASHI Y HATORI N OHNOKI N MATSUTANI A KOYAMA F IGA K
Citation
T. Mukaihara et al., LOW-THRESHOLD MESA-ETCHED VERTICAL-CAVITY INGAAS GAAS SURFACE-EMITTING LASERS GROWN BY MOCVD/, Electronics Letters, 31(8), 1995, pp. 647-648
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
647 - 648
Database
ISI
SICI code
0013-5194(1995)31:8<647:LMVIGS>2.0.ZU;2-B
Abstract
The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm(2) for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure . The thermal characteristic of the fabricated device including therma l resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be ex pected by reducing nonradiative recombination and electrical resistanc e.