TAPERED INGAAS GAAS MQW LASERS WITH CARBON MODULATION-DOPING AND REDUCED FILAMENTATION/

Authors
RALSTON JD LAUGHTON FR CHAZAN P LARKINS EC MAIER M RAHMAN MKA WHITE IH
Citation
Jd. Ralston et al., TAPERED INGAAS GAAS MQW LASERS WITH CARBON MODULATION-DOPING AND REDUCED FILAMENTATION/, Electronics Letters, 31(8), 1995, pp. 651-653
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
651 - 653
Database
ISI
SICI code
0013-5194(1995)31:8<651:TIGMLW>2.0.ZU;2-4
Abstract
Highly localised carbon doping is demonstrated within the active regio n of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam p ropagation simulations, the smaller linewidth enhancement factor arisi ng from the combination of strain and p-doping leads to reduced filame ntation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped activ e legions.