EFFECTS OF ANNEAL TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF NICKEL-BASED OHMIC CONTACTS TO BETA-SIC

Authors
ARUGU DO HARRIS GL TAYLOR C
Citation
Do. Arugu et al., EFFECTS OF ANNEAL TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF NICKEL-BASED OHMIC CONTACTS TO BETA-SIC, Electronics Letters, 31(8), 1995, pp. 678-680
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
678 - 680
Database
ISI
SICI code
0013-5194(1995)31:8<678:EOATOT>2.0.ZU;2-G
Abstract
A study is presented of the effects of anneal temperature on the elect rical characteristics of nickel-based ohmic contacts to beta-SiC. Patt erned metal structures on SiC films were annealed at temperatures rang ing from 400 to 1200 degrees C, and electrically probed. The lowest co ntact resistance was 1.41 x 10(-4) Omega cm(2) at 1000 degrees C.