Citation
Mp. Liao et al., RECESSED-GATE INGAAS MESFETS WITH AN ALAS ETCH-STOP LAYER, Electronics Letters, 31(8), 1995, pp. 684-685
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
8
Year of publication
1995
Pages
684 - 685
Database
ISI
SICI code
0013-5194(1995)31:8<684:RIMWAA>2.0.ZU;2-Z
Abstract
The authors have fabricated InGaAs MESFETs with a double selective gat
e recess process using a thin AlAs layer. Very low gate leakage is obt
ained since the gates are not in contact with the mesa sidewall. 1 mu
m x 100 mu m InGaAs MESFETs exhibit a transconductance, f(T) and f(max
) of 215mS/mm, 24GHz, and 70GHz, respectively.