BASIC PROPERTIES OF ANODIZED POROUS SILICON FORMED UNDER UNIFORM CURRENT-DENSITY

Porous silicon is formed by anodization of single crystalline silicon under various current densities and HF concentrations which are the im portant parameters for anodization. Anodization is carried out in HF s olution at constant temperature under a constant current density distr ibution. This paper describes the fabrication process dependencies of dissolution valence, porosity, and layer formation efficiency which ar e related directly to the anodization conditions. In addition, the mec hanical strength of porous silicon obtained by the hardness measuremen t was related to the self-standing limit of porous silicon obtained by a cylindrical model for pores arranged in the two-dimensional lattice .