Y. Katoh et al., 4-WAVELENGTH DBR LASER ARRAY USING SELECTIVE MOCVD GROWTH, Electronics & communications in Japan. Part 2, Electronics, 77(7), 1994, pp. 21-27
A four-wavelength DBR laser array, fabricated using selective metalorg
anic vapor-phase epitaxy (MOCVD) growth, has been developed as a light
source for a wavelength division multiplexing (WDM) system. Four diff
erent lasing wavelengths were obtained by varying the thickness of the
waveguide. This enabled fabrication of lasers having different wavele
ngths but gratings with the same pitch. First, the InGaAsP layer grown
on an InP substrate which was patterned with stripes of different wid
ths by using an SiO2 mask is evaluated. The growth rate of the InGaAsP
layer between SiO2 masks could be varied to twice as fast as in a fla
t area while maintaining good quality of the crystal. Next, a four-wav
elength DBR laser array is fabricated by using selective MOCVD growth
and a grating with the same pitch. The lasing wavelength was controlle
d at 5-nm intervals over a 15-nm range.