ATOMIC-STRUCTURE DISPLAY OF A REAL SILICON SURFACE UNDER LIGHT-SCATTERING

Angular dependencies of the scattered light intensity were measured on Si wafers that have different crystallographic orientations by using a He-Ne laser (lambda = 632.8 nm, 80 mu m spot diameter). During the e xperiment the Si wafer was fixed relative to the incident beam. Regula r patterns were found in the azimuthal-angle-resolved scattering curve s. Such patterns seem to be caused by the faceted shallow atomic struc tures of the surface.