MICROWAVE INTERACTIONS IN SEMICONDUCTOR MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES UTILIZING A COPLANAR-STRIP GEOMETRY DEVICE

Authors
Citation
Sw. Kirchoefer, MICROWAVE INTERACTIONS IN SEMICONDUCTOR MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES UTILIZING A COPLANAR-STRIP GEOMETRY DEVICE, IEEE transactions on microwave theory and techniques, 43(5), 1995, pp. 1122-1127
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
43
Issue
5
Year of publication
1995
Pages
1122 - 1127
Database
ISI
SICI code
0018-9480(1995)43:5<1122:MIISMH>2.0.ZU;2-L
Abstract
A novel device design utilizing a multiple-quantum-well heterostructur e conduction channel with an oxide-isolated overlying coplanar-strip t ransmission line has been constructed, These devices exhibit negative differential conductance in their dc characteristics for current trans port in the plane of the quantum-well layers, originating from the cha nge in mobility of the heated electrons within the quantum-well struct ure. This device design has permitted the observation of nonlinear con duction properties using these multiple-quantum-well heterostructures at microwave frequencies.