Binding energies of excitons in asymmetrical quantum well systems are
calculated by a perturbative approach based on the effective-mass appr
oximation in the envelope function scheme. We studied the effects of a
composition, a longitudinal uniform electric field and geometrical pa
rameters of AlxGa1-xAs/GaAs quantum well structures on the exciton bin
ding energies. It is shown that, in specially selected structures, cer
tain excitons may be absent inside rather wide domains of a compositio
n or an electric field.