LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS

Citation
Kr. Allakhverdiev et al., LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS, Solid state communications, 94(9), 1995, pp. 777-782
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
94
Issue
9
Year of publication
1995
Pages
777 - 782
Database
ISI
SICI code
0038-1098(1995)94:9<777:LPSOTL>2.0.ZU;2-T
Abstract
Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature ran ge 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that t he crystal undergoes structural phase transitions. Band A is considere d to come from a donor-acceptor recombination channel.