Kr. Allakhverdiev et al., LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS, Solid state communications, 94(9), 1995, pp. 777-782
Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2
and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature ran
ge 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570
eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that t
he crystal undergoes structural phase transitions. Band A is considere
d to come from a donor-acceptor recombination channel.