COPPER-DOPING LEVEL EFFECT ON SENSITIVITY AND SELECTIVITY OF TIN OXIDE THIN-FILM GAS SENSOR

Authors
GALDIKAS A MIRONAS A SETKUS A
Citation
A. Galdikas et al., COPPER-DOPING LEVEL EFFECT ON SENSITIVITY AND SELECTIVITY OF TIN OXIDE THIN-FILM GAS SENSOR, Sensors and actuators. B, Chemical, 26(1-3), 1995, pp. 29-32
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
26
Issue
1-3
Year of publication
1995
Pages
29 - 32
Database
ISI
SICI code
0925-4005(1995)26:1-3<29:CLEOSA>2.0.ZU;2-B
Abstract
The influence of doping level of basic material on electrical resistan ce controlled by gas chemisorption is investigated experimentally for chemically deposited tin oxide thin films with different amounts of Cu and Sb additives. Significant modification of dependences of resistan ce versus temperature in oxygen-rich atmosphere and anomalous change o f selectivity of resistance response to CO and H-2 gas are obtained by different doping levels of the films. The main features of the experi mental results are explained by the variation of the position of the F ermi level with the concentration of bulk impurities.