LASER ANNEALING OF SNO2 THIN-FILM GAS SENSORS IN SINGLE-CHIP PACKAGES

Authors
STEINER K SULZ G NESKE E WAGNER E
Citation
K. Steiner et al., LASER ANNEALING OF SNO2 THIN-FILM GAS SENSORS IN SINGLE-CHIP PACKAGES, Sensors and actuators. B, Chemical, 26(1-3), 1995, pp. 64-67
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
26
Issue
1-3
Year of publication
1995
Pages
64 - 67
Database
ISI
SICI code
0925-4005(1995)26:1-3<64:LAOSTG>2.0.ZU;2-O
Abstract
A Nd:YAG laser beam has been used to anneal thin-film SnO2 gas sensors mounted in TO-8 packages. Annealing temperatures up to 1000 degrees C for a few minutes significantly improve the sensor signal. In particu lar, signal drifts can be reduced. Furthermore, signal changes become very fast around an operating temperature of 300 degrees C. Saturation and recovery times are within seconds for CO and CH4. Ca-implanted se nsors show cross sensitivities towards CO2 and NO2.