EXTENDED X-RAY BREMSSTRAHLUNG ISOCHROMAT FINE-STRUCTURE OF SIO2

X-ray bremsstrahlung isochromat of amorphous SiO2 deposited on Si crys tal was measured in an energy range up to 250 eV above the threshold. Extended X-ray bremsstrahlung isochromat fine structure (EXBIFS) was o bserved up to 150 eV for SiO2 studied. The Fourier transform of EXBIFS showed two peaks originated from first and second neighbors around si licon and oxygen ions. Model calculations of EXBIFS of amorphous SiO2 were performed in terms of single scattering of spherical waves and co mpared with experimental results.