THERMAL-DESORPTION SPECTROSCOPY STUDY OF CHEMICALLY ETCHED POROUS SILICON

Authors
ZOUBIR NH VERGNAT M
Citation
Nh. Zoubir et M. Vergnat, THERMAL-DESORPTION SPECTROSCOPY STUDY OF CHEMICALLY ETCHED POROUS SILICON, Applied surface science, 89(1), 1995, pp. 35-38
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
89
Issue
1
Year of publication
1995
Pages
35 - 38
Database
ISI
SICI code
0169-4332(1995)89:1<35:TSSOCE>2.0.ZU;2-K
Abstract
Thermal desorption spectroscopy experiments, carried out on chemically etched porous silicon, allowed us to follow simultaneously the releas e of dihydrogen and of entities such as SiH3 or SiF3 from the Si surfa ce. By analysing the experimental curves, the thermodynamic and kineti c parameters of the desorption reactions have been deduced.