PLASMA-ENHANCED REACTIVELY EVAPORATED DEPOSITION OF SIO2-FILMS

Silicon dioxide thin films have been prepared from a SiO molecule flow in oxygen at (1.2-5) X 10(-3) Torr using a high-frequency glow discha rge with a power density of 0.1 W cm(-2). The films were analyzed in c ommon with SiOx films deposited from SiO and O-2 at 10(-4)-10(-2) Torr . The SiO molecule flow was created by reacting oxygen and silicon at 1200 degrees C. It was demonstrated by ellipsometry, X-ray photoelectr on spectroscopy and infrared spectroscopy that using the high-frequenc y glow discharge gave films at T-c that did not contain impurity OH gr oups and which has characterizing properties near thermal SiO2. Compar ison with other low-temperature dielectric films containing impurity O H groups showed that they did not constitute the basic principle under lying the enhanced electroconductivity of such films, while the coolin g length of hot electrons was defined by the form of hydrogen in the f ilms.