IDENTIFYING AND QUANTIFYING POINT-DEFECTS IN SEMICONDUCTORS USING X-RAY-ABSORPTION SPECTROSCOPY - SI-DOPED GAAS

Authors
SCHUPPLER S ADLER DL PFEIFFER LN WEST KW CHABAN EE CITRIN PH
Citation
S. Schuppler et al., IDENTIFYING AND QUANTIFYING POINT-DEFECTS IN SEMICONDUCTORS USING X-RAY-ABSORPTION SPECTROSCOPY - SI-DOPED GAAS, Physical review. B, Condensed matter, 51(16), 1995, pp. 10527-10538
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
16
Year of publication
1995
Pages
10527 - 10538
Database
ISI
SICI code
0163-1829(1995)51:16<10527:IAQPIS>2.0.ZU;2-S