SINGLE-CRYSTAL NIOBIUM NITRIDE THIN-FILMS PREPARED WITH RADICAL BEAM ASSISTED DEPOSITION

Authors
HAYASHI N MURZIN IH SAKAMOTO I OHKUBO M
Citation
N. Hayashi et al., SINGLE-CRYSTAL NIOBIUM NITRIDE THIN-FILMS PREPARED WITH RADICAL BEAM ASSISTED DEPOSITION, Thin solid films, 259(2), 1995, pp. 146-149
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
259
Issue
2
Year of publication
1995
Pages
146 - 149
Database
ISI
SICI code
0040-6090(1995)259:2<146:SNNTPW>2.0.ZU;2-S
Abstract
We employed a radical beam assisted deposition technique to prepare si ngle-crystal niobium nitride thin films on MgO(100) substrates. The ra dical beam containing excited species of nitrogen was produced by an e lectron cyclotron resonance plasma source and used to irradiate the gr owing Nb film which was deposited simultaneously by an electron-gun va pour source. The nitride film was found to grow epitaxially on the sub strate heated to 600-650 degrees C. The resulting NbN film formed had predominantly B1 structure, resistivity of 44 mu Omega cm at 20 K, and almost equiatomic composition.