M. Kirsten et al., DEPOSITION OF THICK DOPED POLYSILICON FILMS WITH LOW-STRESS IN AN EPITAXIAL REACTOR FOR SURFACE MICROMACHINING APPLICATIONS, Thin solid films, 259(2), 1995, pp. 181-187
Polysilicon films were deposited in an epitaxial batch reactor at a hi
gh deposition rate. The effect of the deposition temperature, total pr
essure, source gas flow and in situ doping on the deposition rate and
morphological and electrical properties of these films was studied. La
yers with thicknesses up to 12 mu m were deposited on a sacrificial ox
ide covered with a thin polysilicon nucleation layer, which was formed
in a low pressure chemical vapour deposition reactor. The thick polys
ilicon layers were characterized in terms of the surface roughness, gr
ain growth and concentration and distribution of dopants. The residual
stress and stress gradient were also determined. This material was fo
und to be highly suitable for surface micromachining applications beca
use of its low residual stress level, homogeneous doping profile and e
xcellent mechanical properties.