The temperature dependence of the I-V characteristics of many single-e
lectron tunneling devices enables thermometer operation of these syste
ms. Two normal conducting kinds of them are investigated, a) a single
junction in a high-impedance environment and b) a double junction. The
characteristics of both devices show a cross-over from Coulomb blocka
de at low temperatures to ohmic behavior at high temperatures. The rel
ated differential conductivity dip allows the determination of the tem
perature of the junctions. Both configurations a) and b) are expected
to work at least within the range 0.5 less than or equal to beta E(c)
less than or equal to 10, where E(c) is the Coulomb energy of the syst
em under investigation. An analytical solution for both low- and high-
temperature cases of a) and b) as well as numerical results and their
fit are presented, including the effect of co-tunneling in case of a d
ouble junction.