EFFECTIVE POLARIZABILITY OF 2DEG IN SILICON INVERSION LAYER FOR IONIZED IMPURITY SCATTERING AT LOW-TEMPERATURES

Authors
BORZDOV VM KOMAROV FF PETROVICH TA
Citation
Vm. Borzdov et al., EFFECTIVE POLARIZABILITY OF 2DEG IN SILICON INVERSION LAYER FOR IONIZED IMPURITY SCATTERING AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 188(2), 1995, pp. 5-8
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
188
Issue
2
Year of publication
1995
Pages
5 - 8
Database
ISI
SICI code
0370-1972(1995)188:2<5:EPO2IS>2.0.ZU;2-U