INFLUENCE OF THE ANGULAR-DISTRIBUTION OF BACKSCATTERED ELECTRONS ON SIGNALS AT DIFFERENT TAKE-OFF ANGLES IN LOW-VOLTAGE SCANNING ELECTRON-MICROSCOPY (LVSEM)

Citation
M. Spranck et al., INFLUENCE OF THE ANGULAR-DISTRIBUTION OF BACKSCATTERED ELECTRONS ON SIGNALS AT DIFFERENT TAKE-OFF ANGLES IN LOW-VOLTAGE SCANNING ELECTRON-MICROSCOPY (LVSEM), Scanning, 17(2), 1995, pp. 97-105
Citations number
23
Categorie Soggetti
Microscopy
Journal title
ISSN journal
01610457
Volume
17
Issue
2
Year of publication
1995
Pages
97 - 105
Database
ISI
SICI code
0161-0457(1995)17:2<97:IOTAOB>2.0.ZU;2-Q
Abstract
It is well known that the differential Mott cross section for large-an gle elastic scattering shows maxima and minima at angles depending on material and electron energy. For electron energies of 10-30 keV, the averaging by frequent elastic scattering processes results in approxim ate Lambert angular distributions of backscattered electrons (BSE). Ho wever, the present Monte Carlo calculations for electron energies E = 1-5 keV and different angles of incidence show strong deviations from a Lambert distribution which increases with decreasing energy. The sig nals of the BSE detector with five annular segments for different take -off directions show good agreement with the calculations for normal e lectron incidence.