NEAR-BAND-EDGE ABSORPTION AND POSITRON TRAPPING UNDER ILLUMINATION INSEMIINSULATING GAAS - ROLE OF AS VACANCIES

Citation
C. Leberre et al., NEAR-BAND-EDGE ABSORPTION AND POSITRON TRAPPING UNDER ILLUMINATION INSEMIINSULATING GAAS - ROLE OF AS VACANCIES, Applied physics letters, 66(19), 1995, pp. 2534-2536
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
66
Issue
19
Year of publication
1995
Pages
2534 - 2536
Database
ISI
SICI code
0003-6951(1995)66:19<2534:NAAPTU>2.0.ZU;2-X