MOLECULAR-BEAM EPITAXY REGROWTH USING A THIN IN LAYER FOR SURFACE PASSIVATION

Authors
PENG CK TU SL CHEN SS LIN CC
Citation
Ck. Peng et al., MOLECULAR-BEAM EPITAXY REGROWTH USING A THIN IN LAYER FOR SURFACE PASSIVATION, Applied physics letters, 66(19), 1995, pp. 2549-2551
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
19
Year of publication
1995
Pages
2549 - 2551
Database
ISI
SICI code
0003-6951(1995)66:19<2549:MERUAT>2.0.ZU;2-4