SEMIINSULATING INP GROWN BY CHEMICAL BEAM EPITAXY WITH PENTACARBONYLIRON DOPING

Authors
WALKER JD TSANG WT
Citation
Jd. Walker et Wt. Tsang, SEMIINSULATING INP GROWN BY CHEMICAL BEAM EPITAXY WITH PENTACARBONYLIRON DOPING, Applied physics letters, 66(19), 1995, pp. 2558-2560
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
19
Year of publication
1995
Pages
2558 - 2560
Database
ISI
SICI code
0003-6951(1995)66:19<2558:SIGBCB>2.0.ZU;2-U