AB-INITIO STUDY OF THE ELECTRONIC-STRUCTURE AND CONDUCTION PROPERTIESOF OXY-DERIVATIVES OF POLYTHIOPHENE

Authors
Citation
Ak. Bakhshi, AB-INITIO STUDY OF THE ELECTRONIC-STRUCTURE AND CONDUCTION PROPERTIESOF OXY-DERIVATIVES OF POLYTHIOPHENE, Solid state communications, 94(11), 1995, pp. 943-946
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
94
Issue
11
Year of publication
1995
Pages
943 - 946
Database
ISI
SICI code
0038-1098(1995)94:11<943:ASOTEA>2.0.ZU;2-5
Abstract
The electronic structure and conduction properties of two oxy-derivati ves of polythiophene (PTP), polythiophene monoxide (PTMO) and polythio phenedioxide (PTDO) have been investigated on the basis of the ab init io Hartree Fock crystal orbital method using double-zeta basis set. Th e addition of oxygen atoms at sulphur in PTP is found to considerably influence the electronic properties of PTP. Both PTMO and PTDO are pre dicted to have much smaller band gap than PTP. The nature of quasi-one dimensional superlattices of PTP with both PTMO and PTDO and their el ectronic properties are also briefly discussed.