BOR IONS ACCELERATION ON U-120 CYCLOTRON

Authors
GRANTSEV VI BELSKII EM BOIKO AN GONCHARENKO VP PRODUVALOV YS
Citation
Vi. Grantsev et al., BOR IONS ACCELERATION ON U-120 CYCLOTRON, UKRAINSKII FIZICHESKII ZHURNAL, 39(5-6), 1994, pp. 540-541
Citations number
1
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
39
Issue
5-6
Year of publication
1994
Pages
540 - 541
Database
ISI
SICI code
0202-3628(1994)39:5-6<540:BIAOUC>2.0.ZU;2-4
Abstract
The possibility of acceleration of B-10(+) ions up to the energy of 2. 7 MeV has been investigated with U-120 cyclotron. Ion implantation and the preparation of semiconductor devices prototypes based on the sili con - bor structures are performed. While the fluences of implanted io ns are equal to 10(16) and 10(17) cm(-2), the bor concentration in the surface layer of 1 mu m reaches 10(20) cm(-3).