SOUND GENERATION UNDER PULSE PHOTOEXCITAT ION IN LAYERED SEMICONDUCTORS PBI2

Authors
BRODIN MS BLONSKIJ IV KOZENEV VF TCHORIK VA
Citation
Ms. Brodin et al., SOUND GENERATION UNDER PULSE PHOTOEXCITAT ION IN LAYERED SEMICONDUCTORS PBI2, UKRAINSKII FIZICHESKII ZHURNAL, 39(5-6), 1994, pp. 607-613
Citations number
15
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
39
Issue
5-6
Year of publication
1994
Pages
607 - 613
Database
ISI
SICI code
0202-3628(1994)39:5-6<607:SGUPPI>2.0.ZU;2-Z
Abstract
Investigations of photoacoustic response of different layered semi-con ductor PbI2 polytypes, that depend on the quantum energy h nu(ex), exc iting densities I-o, and temperature T (4.5 - 300 K), show that the ma in mechanism of the sound generation in such materials under photo-exc itation by periodical nanosecond-laser-pulses is thermoelastic. The ob served structure of photoacoustic response changes is connected with d istruction of the samples and appearance of thermally detached areas.