DEEP LEVELS OF THE NEUTRON-IRRADIATED GE AND INTRINSIC CONDUCTIVITY

It is shown through the numerical solution of all electrical neutralit y equation that a deep donor level, which is slightly compensated by s hallow accepters and situated below the midgap, appears as an accepter at low temperatures due to the valence band --> deep level transition s. At high temperatures it exhibits donor properties due to the deep l evel --> conduction band transitions that results in the sign inversio n for both charge carriers and the Hall coefficient. The experimental Hall coefficient vs temperature dependences for the neutron-irradiated Ge are presented and compared with the results of calculations.