INFLUENCE OF STRONG UNIAXIAL DEFORMATION ON THE PROPERTIES OF GAMMA-IRRADIATED NEUTRON-DOPED SILICON

In order to determine the origin of the anisotropy of high tensoresist ivity or gamma-irradiated usually doped Czochralsky n-Si(P) crystals, the measurements of transport properties have been made for uniaxially strained, neutron-doped, and gamma-irradiated n-Si(P) crystals. We ob served the absence of a high anisotropy of the tensoresistivity in the latter even for the higher degree of the compensation of donor stales by radiation-induced acceptor states as compared with the phosphorus- doped and gamma-irradiated crystals. The comparative examination of th e tensoresistivity properties of both kinds of doped and gamma-irradia ted crystals permits to determine that the mentioned above anisotropy may be connected with tile striated distribution of phosphorus atoms s lid the subsequent nonhomogeneous compensation which emerges after gam ma-irradiation.