ON THE ROLE OF SURFACE-STATES IN THE PHOT OCURRENT TRANSPORT IN METAL-TUNNEL-DIELECTRIC SEMICONDUCTOR STRUCTURES

Photoelectrical and electrophysical characteristics of Ti - SiOx - p-S i structures with a different thickness of SiOx have been investigated . The reversible changes of the photocurrent as a result of applicatio n of the bias were found in structures with the thickness of dielectri c of about 5,5 - 6,0 nm that is due to the change of charge surface st ates. DLTS spectra of these structures confirm the existence of a comp lex system of surface states. The investigations have of shown that a fraction of the photocurrent with a participation of surface states de pends on the thickness of dielectric, conditions of the metal coating, and temperature.