A NOVEL OFFSET GATED POLYSILICON THIN-FILM-TRANSISTOR WITHOUT AN ADDITIONAL OFFSET MASK

We have proposed a novel offset gated polysilicon TFT's device without an offset mask in order to reduce a leakage current and suppress a ki nk effect. The photolithographic process steps of the new TFT's device are identical to those of conventional nonoffset structure TFT's and an additional mask to fabricate an offset structure is not required in our device. The new device has demonstrated a lower leakage current a nd a better ON/OFF current ratio compared with the conventional nonoff set device, The novel TFT device also exhibits a considerable reductio n of the kink effect because a very thin him TFT devices may be easily fabricated due to the elimination of contact over-etch problem.