THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS

Authors
LIN YH LEE CL LEI TF CHAO TS
Citation
Yh. Lin et al., THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS, IEEE electron device letters, 16(5), 1995, pp. 164-165
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
5
Year of publication
1995
Pages
164 - 165
Database
ISI
SICI code
0741-3106(1995)16:5<164:TPOTTO>2.0.ZU;2-N
Abstract
A method of using a thin oxide on the top of the poly-Si gate to gette r fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the bo ron penetration through the gate oxide is suppressed. The MOS capacito rs fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.