A NOVEL BETA-SIC SI HETEROJUNCTION BACKWARD DIODE/

In this letter, a novel beta-SiC/Si heterojunction backward diode has- been developed successfully. The developed new backward diode is somew hat different from a conventional one, The beta-SiC thin film was grow n by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a SiH4-C3H8-H2 gas system. Its current-voltage characteristics under different operation temperatures (25-200 degrees C) have been me asured. In addition, the curvature coefficient gamma has also been cal culated and it is found to be insensitive to temperature variation up to 180 degrees C. The operation temperature is the highest reported th us far, to our knowledge.