SELECTIVE T-SITE SUBSTITUTION AS A CAUSE OF THE ANISOTROPY OF LATTICEEXPANSION IN TITANOSILICATE-1 INVESTIGATED BY MOLECULAR-DYNAMICS AND COMPUTER-GRAPHICS
Y. Oumi et al., SELECTIVE T-SITE SUBSTITUTION AS A CAUSE OF THE ANISOTROPY OF LATTICEEXPANSION IN TITANOSILICATE-1 INVESTIGATED BY MOLECULAR-DYNAMICS AND COMPUTER-GRAPHICS, Microporous materials, 4(1), 1995, pp. 53-57
The selective substitution of a silicon by titanium in MFI lattice was
investigated by molecular dynamics (MD) and computer graphics (CG). I
t was demonstrated that the MD method, using a simple two-body interat
omic potential, is effective to reproduce the framework structure. The
lattice expansion as a function of the location and concentration of
Ti in the titanosilicate with the MFI structure (titanosilicate-1, TS-
) was calculated, and the results were consistent with experimental da
ta. The anisotropic lattice expansion due to Ti substitution in variou
s crystallographic sites of MFI lattice was studied. The favorable sit
e for Ti substitution was discussed by comparing the expansions of lat
tice parameters reported by X-ray diffraction(XRD) studies. MD and CG
are effective methods for explaining the anisotropic lattice expansion
and for determining the substituted sites of isomorphous substitution
in TS-1.