R. Jothilingam et al., STUDIES ON NUCLEATION KINETICS OF IN1-XGAXP GAAS BY LIQUID-PHASE EPITAXY/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 117-128
Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of
In1-zGaxP on GaAs substrate have been studied. The behaviour of non-eq
uilibrium solid-liquid interface between In-Ga-P solution and GaAs sub
strate has been analysed and hence the expression derived for the stre
ss-induced supercooling has been incorporated in the classical heterog
eneous nucleation theory. The condition for the growth of good-quality
GaInP layer on GaAs substrate has been shown theoretically.