STUDIES ON NUCLEATION KINETICS OF IN1-XGAXP GAAS BY LIQUID-PHASE EPITAXY/

Authors
JOTHILINGAM R DHANASEKARAN R RAMASAMY P
Citation
R. Jothilingam et al., STUDIES ON NUCLEATION KINETICS OF IN1-XGAXP GAAS BY LIQUID-PHASE EPITAXY/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 117-128
Citations number
44
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
2
Year of publication
1995
Pages
117 - 128
Database
ISI
SICI code
0392-6737(1995)17:2<117:SONKOI>2.0.ZU;2-Y
Abstract
Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of In1-zGaxP on GaAs substrate have been studied. The behaviour of non-eq uilibrium solid-liquid interface between In-Ga-P solution and GaAs sub strate has been analysed and hence the expression derived for the stre ss-induced supercooling has been incorporated in the classical heterog eneous nucleation theory. The condition for the growth of good-quality GaInP layer on GaAs substrate has been shown theoretically.