DISTRIBUTION OF COMPONENTS IN SINGLE-CRYSTALS GROWN FROM COMPLETELY MIXED MELTS OF HG1-XCDXTE AND PB1-XSNXTE SYSTEMS

Authors
FANO V MA WY ORTALLI I MELETTI G
Citation
V. Fano et al., DISTRIBUTION OF COMPONENTS IN SINGLE-CRYSTALS GROWN FROM COMPLETELY MIXED MELTS OF HG1-XCDXTE AND PB1-XSNXTE SYSTEMS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 205-208
Citations number
5
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
2
Year of publication
1995
Pages
205 - 208
Database
ISI
SICI code
0392-6737(1995)17:2<205:DOCISG>2.0.ZU;2-Z
Abstract
A method is given to calculate the maximum compositional gradient in s ingle crystals, grown by unidirectional solidification, of binary or p seudobinary materials. The calculation is based on the data obtained f rom the phase diagrams. Compositional gradients of HgTe-CdTe and PbTe- SnTe systems along the growth axis are shown.