HIGH-RESOLUTION SYNCHROTRON-RADIATION CORE-LEVEL SPECTROSCOPY OF SEMICONDUCTOR SURFACES

Thanks to recent technical developments (optics and detection systems) , at several synchrotron radiation facilities in the world, it is poss ible to perform photoemission spectroscopy studies with very. high res olution. In the present report, we will review the new insights gained from high-resolution core-level spectroscopy on the structural and el ectronic properties of different semiconductor surfaces, such as InAs( 110), Si and Ge(100) and (111), as well as clean and adsorbate covered Si and Ge(111) surfaces.