GROWTH OF DIAMOND THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION

Authors
Citation
Ak. Kulkarni, GROWTH OF DIAMOND THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION, Bulletin of Materials Science, 17(7), 1994, pp. 1379-1391
Citations number
25
Categorie Soggetti
Material Science
ISSN journal
02504707
Volume
17
Issue
7
Year of publication
1994
Pages
1379 - 1391
Database
ISI
SICI code
0250-4707(1994)17:7<1379:GODTBC>2.0.ZU;2-D
Abstract
Deposition of diamond thin films on non-diamond substrates at low pres sures (< 760 torr) and low temperatures (< 2000 degrees C) by chemical vapour deposition (CVD) has been: the subject of intense research in the last few years. The structural and the electrical properties of CV D diamond films grown on p-type < 111 > and high-resistivity (> 100 k Ohm-cm) < 100 > oriented silicon substrates by hot filament chemical v apour deposition technique are described in this review paper.