ESCAPE PEAK RATIOS IN SILICON X-RAY CHARGE-COUPLED-DEVICES (CCDS)

Authors
MCCARTHY KJ OWENS A KEAY A
Citation
Kj. Mccarthy et al., ESCAPE PEAK RATIOS IN SILICON X-RAY CHARGE-COUPLED-DEVICES (CCDS), Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 384(2-3), 1997, pp. 403-409
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
384
Issue
2-3
Year of publication
1997
Pages
403 - 409
Database
ISI
SICI code
0168-9002(1997)384:2-3<403:EPRISX>2.0.ZU;2-C
Abstract
The intensity of the escape peak from the CCDs developed for the Joint European X-ray Telescope (JET-X) has been investigated over the energ y range 2-10 keV. Both measured and calculated escape peak ratios (i.e ., the ratio of counts in the escape peak to the sum of the counts in the escape and main peaks) are found to be in excellent agreement for all event sizes (i.e., single pixel events, 1 and 2 pixel events, etc. ). Using a Monte Carlo simulation the escape peak ratio has been inves tigated as a function of pixel size and depletion depth. For completen ess, we list the energy dependent parameterised forms for five CCDs us ed in three major astronomy missions.