TWIN-FREE CDHGTE LAYERS GROWN BY MOCVD ON VICINAL (211) GAAS-SURFACES

Authors
TROMSONCARLI A GIRARDFRANCOIS A DRUILHE R GRATTEPAIN C TRIBOULET R
Citation
A. Tromsoncarli et al., TWIN-FREE CDHGTE LAYERS GROWN BY MOCVD ON VICINAL (211) GAAS-SURFACES, Materials letters, 23(1-3), 1995, pp. 93-98
Citations number
10
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
23
Issue
1-3
Year of publication
1995
Pages
93 - 98
Database
ISI
SICI code
0167-577X(1995)23:1-3<93:TCLGBM>2.0.ZU;2-5
Abstract
Following a study on the morphological and structural properties of Cd Te and CdZnTe layers grown by MOCVD on GaAs substrates of (h11) orient ation and A or B polarity, the growth on (211) GaAs substrates misorie nted toward (111) and (100) is investigated. High structural quality t win-free CdHgTe layers of near (525) orientation are obtained on (211) surfaces misoriented toward (111), while a misorientation toward (100 ) leads to a very high density of twins. These results are explained f rom the bond features at the growth interface.