Following a study on the morphological and structural properties of Cd
Te and CdZnTe layers grown by MOCVD on GaAs substrates of (h11) orient
ation and A or B polarity, the growth on (211) GaAs substrates misorie
nted toward (111) and (100) is investigated. High structural quality t
win-free CdHgTe layers of near (525) orientation are obtained on (211)
surfaces misoriented toward (111), while a misorientation toward (100
) leads to a very high density of twins. These results are explained f
rom the bond features at the growth interface.