NUMERICAL-ANALYSIS OF PHOTOENHANCED ELECTRIC CURRENTS IN MOLECULAR MATERIALS

This paper presents numerical calculations of photoenhanced current-ap plied voltage and photoenhanced current-light intensity characteristic s with regard to the exciton diffusion length, lifetime of excitons an d rate of exciton surface quenching. Dependencies of this type cannot be obtained analytically. It is shown that the increase in diffusion l ength causes the decrease in current in the case of strong surface que nching of excitons. Simultaneously, it is shown that the quality of cr ystals influences the photoenhanced current. A better quality of cryst als causes the increase in the current in the case of weak surface que nching of excitons.