S. Bach et al., EFFECT OF BI-DOPING ON THE ELECTROCHEMICAL-BEHAVIOR OF LAYERED MNO2 AS LITHIUM INTERCALATION COMPOUND, Electrochimica acta, 40(6), 1995, pp. 785-789
Electrochemical lithium insertion into layered MnO2 forms containing b
ismuth is reported. A low temperature technique based on a slow coprec
ipitation in acidic medium in the presence of KMnO4 and a bismuth (III
) salt is applied, leading to amorphous MnO2 forms. A chronopotentiome
tric study has shown that the lithium insertion process occurs in one
step located at 3 V and is found to be reversible in the whole range 0
< x < 0.8. The influence of the bismuth and water content on the galv
anostatic cycling curves has been studied. These results are discussed
and compared with the electrochemical behaviour of the sol-gel birnes
site MnO1.84, nH(2)O. The best results are obtained for the lowest Bi
content with a high specific capacity of 120 Ah kg(-1) recovered after
the 50th cycle at a discharge-charge rate of C/8, while the lover the
water content, the poorer the cycling behaviour. From the better reve
rsible behaviour found for the Bi-doped MnO2 structure in comparison w
ith the sol-gel birnessite compound, one can suggest that a pillaring
effect due to interlayer Bi3+ ions minimizes the magnitude of structur
al changes.