BANDGAP ANOMALY AND APPEARANCE OF A MONOLAYER SUPERLATTICE IN INGAAS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
KALITEEVSKI MA KAVOKIN AV MINTAIROV AM POZINA GR SINITSYN MA
Citation
Ma. Kaliteevski et al., BANDGAP ANOMALY AND APPEARANCE OF A MONOLAYER SUPERLATTICE IN INGAAS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 10(5), 1995, pp. 624-626
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
5
Year of publication
1995
Pages
624 - 626
Database
ISI
SICI code
0268-1242(1995)10:5<624:BAAAOA>2.0.ZU;2-L
Abstract
Raman scattering (RS) and photoluminescence (PL) spectra of InxGa1-xAs (x = 0.05-0.18) grown by the metal organic chemical vapour deposition (MOCVD) method at different substrate temperatures (T-s) have been st udied. For x > 0.1 the Lo-phonon bands of the (100)-(InAs)(1)(GaAs)(1) monolayer superlattice (MS) phase are observed in the as spectra. It is found that for x = 0.12-0.16 the increase of T-s from 650 to 700 de grees C results in a 40 meV red shift of the 1.6 K PL peak. A model is suggested attributing this red shift to the exciton localization ener gy at the InAs-type antiphase boundaries between (InAs)(1)(GaAs)(1) MS domains.