RAMAN-STUDY OF A ZNIN2S4 LAYERED COMPOUND

Authors
LOPEZRIVERA SA MARTINEZ L FONTAL B GIRIAT W MEDINA F
Citation
Sa. Lopezrivera et al., RAMAN-STUDY OF A ZNIN2S4 LAYERED COMPOUND, Semiconductor science and technology, 10(5), 1995, pp. 645-652
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
5
Year of publication
1995
Pages
645 - 652
Database
ISI
SICI code
0268-1242(1995)10:5<645:ROAZLC>2.0.ZU;2-Q
Abstract
We present the Raman scattering of single-crystal ZnIn2S4 as a functio n of temperature in the range between 12 K and room temperature and an analysis of the relative intensity changes for all the bands. Based o n a group theoretical analysis using the different possible space grou ps for this structure, the vibrational modes for the Raman spectra wer e obtained and compared with the experimental data. A new space group is proposed for the crystal structure for this semiconductor.