ELECTRICAL AND OPTICAL-PROPERTIES OF A QUANTUM-WELL INFRARED PHOTOTRANSISTOR

Authors
RYZHII V ERSHOV M
Citation
V. Ryzhii et M. Ershov, ELECTRICAL AND OPTICAL-PROPERTIES OF A QUANTUM-WELL INFRARED PHOTOTRANSISTOR, Semiconductor science and technology, 10(5), 1995, pp. 687-690
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
5
Year of publication
1995
Pages
687 - 690
Database
ISI
SICI code
0268-1242(1995)10:5<687:EAOOAQ>2.0.ZU;2-I
Abstract
The electrical and optical properties of quantum-well infrared phototr ansistors (QWIPTS) utilizing intersubband electron transitions from a single quantum well (QW) are studied theoretically. The dependences of the electron concentration in the QW, the dark current, the photocurr ent and the responsivity on applied bias voltage are evaluated. The re sults obtained can be used for the optimization of the QWIPT performan ce.