IMPROVEMENT OF THE INTERFACE PROPERTIES OF CA0.43SR0.57F2 ON GAAS(100) BY RAPID THERMAL ANNEALING

Authors
CHAUDHARI GN RAO VJ
Citation
Gn. Chaudhari et Vj. Rao, IMPROVEMENT OF THE INTERFACE PROPERTIES OF CA0.43SR0.57F2 ON GAAS(100) BY RAPID THERMAL ANNEALING, Semiconductor science and technology, 10(5), 1995, pp. 703-706
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
5
Year of publication
1995
Pages
703 - 706
Database
ISI
SICI code
0268-1242(1995)10:5<703:IOTIPO>2.0.ZU;2-3
Abstract
The interface properties of Ca0.43Sr0.57F2 films grown by a thermal ev aporation technique on GaAs(100) substrates were investigated. It was found that in situ rapid thermal annealing, typically at 590 degrees C for 10 s, was useful for improving the interface properties of fluori de/GaAs MIS structures. Analysis by double-crystal x-ray diffraction a nd photoluminescence spectroscopy indicates good interface quality of the Ca0.43Sr0.57F2/GaAs heterostructure.