VERTICAL STRESS IN LIQUID-PHASE EPITAXY SI LAYERS ON SIO2 SI EVALUATED BY X-RAY DOUBLE-CRYSTAL TOPOGRAPHY/

By means of x-ray double-crystal topography we have investigated silic on-on-insulator lamellae grown by liquid-phase epitaxy upon thermally oxidized silicon. The majority of the lamellae were free of extended d efects. It is shown that the topographic contrasts of these lamellae a re mainly due to vertical stress exerted by the lamellae onto the subs trate. This is surprising because the aspect ratio (thickness/lateral dimension) is of the order of 10(-2). Our first calculations lead us t o estimate the stress to be around 10 N cm(-2). A simple model, which may be assumed to apply in general for crystal growth on amorphous sub strates, is described here. it relates the stress to an adhesive force , which acts during growth.